features trenchfet power mosfets 200 c junction temperature new package with low thermal resistance applications automotive - 42-v power bus - dc/dc conversion - motor drivers - injection systems SUM110N10-08 vishay siliconix new product document number: 72074 s-22126?rev. a, 25-nov-02 www.vishay.com 1 n-channel 100-v (d-s) 200 c mosfet product summary v (br)dss (v) r ds(on) ( ) i d (a) 100 0.0085 @ v gs = 10 v 110 a d g s n-channel mosfet to-263 s d g top view SUM110N10-08 absolute maximum ratings (t c = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 100 gate-source voltage v gs 20 v t c = 25 c 110 a continuous drain current (t j = 200 c) t c = 125 c i d 75 pulsed drain current i dm 440 a avalanche current i ar 75 repetitive avalanche energy b l = 0.1 mh e ar 280 mj t c = 25 c 437.5 c maximum power dissipation b t a = 25 c d p d 3.75 w operating junction and storage temperature range t j , t stg -55 to 200 c thermal resistance ratings parameter symbol limit unit junction-to-ambient (pcb mount) d r thja 40 junction-to-case (drain) r thjc 0.4 c/w notes a. package limited. b. duty cycle 1%. c. see soa curve for voltage derating. d. when mounted on 1? square pcb (fr-4 material).
SUM110N10-08 vishay siliconix new product www.vishay.com 2 document number: 72074 s-22126 ? rev. a, 25-nov-02 specifications (t j =25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v ds = 0 v, i d = 250 a 100 gate-threshold voltage v gs(th) v ds = v gs , i d = 250 a 2 4 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 80 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 80 v, v gs = 0 v, t j = 125 c 50 a dss v ds = 80 v, v gs = 0 v, t j = 200 c 10 ma on-state drain current a i d(on) v ds 5 v, v gs = 10 v 120 a v gs = 10 v, i d = 30 a 0.0068 0.0085 drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 30 a, t j = 125 c 0.016 ds(on) v gs = 10 v, i d = 30 a, t j = 200 c 0.025 forward transconductance a g fs v ds = 15 v, i d = 30 a 25 s dynamic b input capacitance c iss 8700 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 740 pf reverse transfer capacitance c rss 450 total gate charge c q g 140 160210 gate-source charge c q gs v ds = 50 v, v gs = 10 v, i d = 85 a 41 nc gate-drain charge c q gd ds gs d 41 turn-on delay time c t d(on) 20 30 rise time c t r v dd = 50 v, r l = 0.6 110 170 turn-off delay time c t d(off) v dd = 50 v, r l = 0.6 i d 85 a, v gen = 10 v, r g = 2.5 65 100 ns fall time c t f 100 150 source-drain diode ratings and characteristics (t c = 25 c) b continuous current i s 110 pulsed current i sm 240 a forward voltage a v sd i f = 50 a, v gs = 0 v 1.0 1.5 v reverse recovery time t rr 70 140 ns peak reverse recovery current i rm(rec) i f = 50 a, di/dt = 100 a/ s 5.5 10 a reverse recovery charge q rr f 0.19 0.35 c notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. c. independent of operating temperature.
SUM110N10-08 vishay siliconix new product document number: 72074 s-22126 ? rev. a, 25-nov-02 www.vishay.com 3 typical characteristics (25 c unless noted) 0 2000 4000 6000 8000 10000 12000 0 20406080100 0 4 8 12 16 20 0 50 100 150 200 250 0 50 100 150 200 250 0 153045607590 0.000 0.003 0.006 0.009 0.012 0.015 0 20 40 60 80 100 120 0 50 100 150 200 250 0123456 0 50 100 150 200 250 0246810 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds - drain-to-source voltage (v) v gs - gate-to-source voltage (v) - drain current (a) i d - gate-to-source voltage (v) q g - total gate charge (nc) i d - drain current (a) v ds - drain-to-source voltage (v) c - capacitance (pf) v gs - transconductance (s) g fs 25 c -55 c t c = 125 c v ds = 50 v i d = 85 a v gs = 10 thru 6 v v gs = 10 v c iss c oss t c = -55 c 25 c 125 c 4 v - on-resistance ( r ds(on) ) - drain current (a) i d i d - drain current (a) c rss 5 v
SUM110N10-08 vishay siliconix new product www.vishay.com 4 document number: 72074 s-22126 ? rev. a, 25-nov-02 typical characteristics (25 c unless noted) drain source breakdown vs. junction t emperature avalanche current vs. time 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage t j - junction temperature ( c) v sd - source-to-drain voltage (v) - source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 v gs = 10 v i d = 30 a t j = 25 c t j = 150 c (normalized) - on-resistance ( r ds(on) ) 0 95 100 105 110 115 120 125 -50 -25 0 25 50 75 100 125 150 175 t j - junction temperature ( c) t in (sec) 1000 10 0.00001 0.001 0.1 1 0.1 (a) i dav 0.01 i av (a) @ t a = 150 c (v) v (br)dss i d = 10 ma 100 1 0.0001 i av (a) @ t a = 25 c
SUM110N10-08 vishay siliconix new product document number: 72074 s-22126 ? rev. a, 25-nov-02 www.vishay.com 5 thermal ratings 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 safe operating area v ds - drain-to-source voltage (v) 1000 10 0.1 1 10 100 limited by r ds(on) 0.1 100 t c = 25 c single pulse maximum avalanche and drain current vs. case t emperature t c - ambient temperature ( c) - drain current (a) i d normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 normalized effective transient thermal impedance 1 0.2 0.1 duty cycle = 0.5 - drain current (a) i d 1 ms 10 ms dc, 100 ms 100 s, 10 s single pulse 0.05 0.02 1
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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